Qing Liu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Qing Liu has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Chunhui Zhu
College of Physics, Hebei Normal University, Shijiazhuang 050024, China
1 shared publication - Mengru Li
School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
1 shared publication - Qianqian Du
School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
1 shared publication - Shuchao Qin
School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
1 shared publication - Wenjun Wang
School of Physical Science and Information Technology, Liaocheng University, Liaocheng 252059, China
1 shared publication - Xialian Zheng
School of Physical Science and Information Engineering, Liaocheng University, Liaocheng 252059, China
1 shared publication
Latest Publications
- Open Access
Asymmetric Schottky Barrier in Rubrene Transistor via Monolayer Graphene Insertion toward Self-Powered Imaging
Organic semiconductor materials featuring lightweight, and flexibility may play a significant role in various future applications, such as foldable displays, wearable devices, and artificial skin. For developing high-performance organic devices, organic crystals are highly desired, while a remaining fundamental issue is their contact problem. Here, we have grown a high-quality rubrene single crystal by utilizing a simple in-air sublimation technique. The contact characteristics (barrier height and contact resistance) are detail-studied by resist-free transfer electrodes (Au metal or graphene/Au). The Schottky barrier of the rubrene/graphene interface is lower and can be also modulated by gate bias, which is confirmed by spatial photocurrent mapping. Finally, we demonstrated the zero-bias photocurrent imaging application by constructing the asymmetrical device employing different electrode contacts. Our work would be of significance for studying the contact issue of organic crystals and wireless imaging.
Open AccessAsymmetric Schottky Barrier in Rubrene Transistor via Monolayer Graphene Insertion toward Self-Powered Imaging
Organic semiconductor materials featuring lightweight, and flexibility may play a significant role in various future applications, such as foldable displays, wearable devices, and artificial skin. For developing high-performance organic devices, organic crystals are highly desired, while a remaining fundamental issue is their contact problem. Here, we have grown a high-quality rubrene single crystal by utilizing a simple in-air sublimation technique. The contact characteristics (barrier height and contact resistance) are detail-studied by resist-free transfer electrodes (Au metal or graphene/Au). The Schottky barrier of the rubrene/graphene interface is lower and can be also modulated by gate bias, which is confirmed by spatial photocurrent mapping. Finally, we demonstrated the zero-bias photocurrent imaging application by constructing the asymmetrical device employing different electrode contacts. Our work would be of significance for studying the contact issue of organic crystals and wireless imaging.