Cyril Calvez
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Cyril Calvez has a total of 8 co-authors. Here are the top co-authors by number of shared publications:
Thibaut Chailloux
Laboratoire Ampère, INSA de Lyon
3 shared publications- Dominique Planson
Université Claude Bernard Lyon 1
2 shared publications - Dominique Tournier
Univ Lyon, INSA Lyon, Univ. Claude Bernard Lyon 1
2 shared publications Cyril Calvez Thibaut Chailloux
1 shared publicationDominique Planson
1 shared publication- Dominique Tournier
Caly Technologie, F-69621, Villeurbanne, France
1 shared publication
Latest Publications
- 30 June 2015
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 821-823, 814-817
Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature
The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.
- 30 June 2015
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 821-823, 814-817
Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature
The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.
- 26 February 2014
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 778-780, 1122-1125
SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices
The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.
- 26 February 2014
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 778-780, 1122-1125
SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices
The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.
- 1 January 2013
- Published by IMAPS - International Microelectronics Assembly and Packaging Society in Additional Conferences (Device Packaging, Hitec, Hiten, & Cicmt)
- Vol. 2013 (HITEN) , 000290-000297
Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics
The aim of this study consists in investigating the effects of electrical and thermal stresses on SiC n-p-n bipolar junction transistors (BJTs). The stability of the electrical characteristics of BJTs is inspected under switching operation, DC operation, temperature cycling and continuous thermal stress up to 225°C. While switching operation and temperature cycling for several hours lead to significant changes at 25°C, the electrical characteristics were little degraded at high temperature. Besides, DC operation and continuous thermal stress did not result in significant degradation at all, both at room temperature and at high temperature.
- 1 January 2013
- Published by IMAPS - International Microelectronics Assembly and Packaging Society in Additional Conferences (Device Packaging, Hitec, Hiten, & Cicmt)
- Vol. 2013 (HITEN) , 000290-000297
Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics
The aim of this study consists in investigating the effects of electrical and thermal stresses on SiC n-p-n bipolar junction transistors (BJTs). The stability of the electrical characteristics of BJTs is inspected under switching operation, DC operation, temperature cycling and continuous thermal stress up to 225°C. While switching operation and temperature cycling for several hours lead to significant changes at 25°C, the electrical characteristics were little degraded at high temperature. Besides, DC operation and continuous thermal stress did not result in significant degradation at all, both at room temperature and at high temperature.