In situ measurement of the resistivity of p-type Tellurium films (thickness≃150 Å) as a function of deposition rate has been made for evaluating their strain sensitivity and incorporation into TFT's. Films deposited at 2 A/sec and subjected to an elongation strain displayed a small strain induced resistivity change which switched from a negative to a positive value as the voltage was increased. For all higher rates, the film showed a consistently positive effect regardless of the applied voltage. The anomalous behavior is ascribed to the conditions affecting the barrier height as the grain boundaries. Exposure to air generally resulted in a marked increase in conductivity. No significant increase in the strain sensitivity was observed in a transistor device using SiO and Al as the insulator and gate electrode respectively although the gate voltage modulation of the drain current was quite normal.