Phase separation in ZnSe1—xSx and Zn1−yMgySe1−xSx layers grown by molecular beam epitaxy
Authors:
- G.C. HuaGHG.C. Hua
- N. OtsukaNON. Otsuka
- D.C. GrilloDGD.C. Grillo
- J. HanJHJ. Han
- L. HeLHL. He
- R.L. GunshorRGR.L. Gunshor
- 1 April 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 138 (1-4) , 367-372
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Pseudomorphic separate confinement heterostructure blue-green diode lasersApplied Physics Letters, 1993
- Blue-green injection lasers containing pseudomorphic Zn1−xMgxSySe1−y cladding layers and operating up to 394 KApplied Physics Letters, 1993
- Two-dimensional phase separation in epitaxial layersPhysical Review B, 1992
- Thermodynamic analysis of Zn-Cd-Te, Zn-Hg-Te and Cd-Hg-Te: phase separation in ZnxCd1−xTe and ZnxHg1−xTeJournal of Crystal Growth, 1992
- Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1991
- Spinodal decomposition in InGaAsP epitaxial layersJournal of Crystal Growth, 1984
- A simple method for the determination of structure-factor phase relationships and crystal polarity using electron diffractionJournal of Applied Crystallography, 1982
- Calculation of regular solution interaction parameters in semiconductor solid solutionsJournal of Physics and Chemistry of Solids, 1973
- Anomalous Variation of Band Gap with Composition in Zinc Sulfo- and Seleno-TelluridesPhysical Review B, 1957