Recent Trends in Copper Metallization
Author:
Open Access
- 14 September 2022
- journal article
- review article
- Published by MDPI AG in Electronics
- Vol. 11 (18) , 2914
Abstract
The Cu/low-k damascene process was introduced to alleviate the increase in the RC delay of Al/SiO2 interconnects, but now that the technology generation has reached 1× nm or lower, a number of limitations have become apparent. Due to the integration limit of low-k materials, the increase in the RC delay due to scaling can only be suppressed through metallization. As a result, various metallization methods have been proposed, including traditional barrier/liner thickness scaling, and new materials and integration schemes have been developed. This paper introduces these methods and summarizes the recent trends in metallization. It also includes a brief introduction to the Cu damascene process, an explanation of why the low-k approach faces limitations, and a discussion of the measures of reliability (electromigration and time-dependent dielectric breakdown) that are essential for all validation schemes.Keywords
Funding Information
- “Ling Yan” Program for Tackling Key Problems (2022C01098)
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