Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers
Authors:
- 1 July 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (1) , 49-51
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977
- Stacking-faults in tellurium-doped gallium arsenideJournal of Materials Science, 1968