Ion energy thresholds and stability of cubic boron nitride
Authors:
- S. EyhusenSES. Eyhusen
- I. GerhardsIGI. Gerhards
- H. HofsässHHH. Hofsäss
- C. RonningC. Ronning
- M. BlomenhoferMBM. Blomenhofer
- J. ZweckJZJ. Zweck
- M. SeibtM. Seibt
- 30 November 2003
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 12 (10-11) , 1877-1882
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Growth, doping and applications of cubic boron nitride thin filmsDiamond and Related Materials, 2000
- Effects of MeV ion irradiation of thin cubic boron nitride filmsJournal of Applied Physics, 1998
- Review of advances in cubic boron nitride film synthesisMaterials Science and Engineering: R: Reports, 1997
- Reduced bias growth of pure-phase cubic boron nitrideApplied Physics Letters, 1997
- Formation of c-BN thin films under reduced ion impactSurface and Coatings Technology, 1997
- Thresholds for the phase formation of cubic boron nitride thin filmsPhysical Review B, 1997
- Phase stability and stress relaxation effects of cubic boron nitride thin films under 350 keV ion irradiationDiamond and Related Materials, 1997
- On the low-temperature threshold for cubic boron nitride formation in energetic film depositionDiamond and Related Materials, 1996
- Compressive stress induced formation of cubic boron nitrideDiamond and Related Materials, 1993
- A simple model for the formation of compressive stress in thin films by ion bombardmentThin Solid Films, 1993