Gradual degradation of GaAs double-heterostructure lasers
Authors:
- D. NewmanDND. Newman
- S. RitchieSRS. Ritchie
- 1 February 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 9 (2) , 300-305
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Saturation behavior of the spontaneous emission from double-heterostructure junction lasers operating high above thresholdIEEE Journal of Quantum Electronics, 1973
- Reproducible Liquid-Phase-Epitaxial Growth of Double Heterostructure GaAs–AlxGa1−xAs Laser DiodesJournal of Applied Physics, 1972
- The properties of double heterostructure lasers with very narrow active regionsJournal of Physics D: Applied Physics, 1972
- Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972
- Electroluminescent Diode Degradation Models8th Reliability Physics Symposium, 1970
- Role of optical flux and of current density in gradual degradation of GaAs injection lasersIEEE Journal of Quantum Electronics, 1969
- Physical basis of noncatastrophic degradation in GaAs injection lasersProceedings of the IEEE, 1969
- DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASERApplied Physics Letters, 1964