Versatile p‐Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes

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Abstract
We report effective solution‐processed chemical p‐type doping of graphene using trifluoromethanesulfonic acid (CF3SO3H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air‐stability at the same time. The TFMS‐doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light‐emitting diode with the TFMS‐doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A−1, 80.7 lm W−1) than those with conventional ITO (84.8 cd A−1, 73.8 lm W−1).
Funding Information
  • National Research Foundation of Korea (NRF) (NRF-2013R1A2A2A01068753)
  • Ministry of Science
  • ICT
  • Future Planning (MSIP), Korea (IITP-2015-R0346-15-1007)

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