Optical band gap in relation to the average coordination number in Ge—S—Bi thin films
Authors:
- 21 August 2003
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 239 (1) , 251-256
Abstract
Chalcogenide glasses belonging to the GexS94 − xBi6 system (14 ≤ x ≤ 28.33 at%) have been prepared from high purity constituent elements. Thin films of the same materials have been deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as‐deposited films. The allowed optical transition is found to be indirect and the corresponding optical gaps, Eg, are determined. The variation of Eg with the average coordination number, 〈r〉, is also investigated. The observed Eg − 〈r〉 dependence is discussed on the basis of the chemical bonding between the constituents and the rigidity percolation threshold behavior of the network.Keywords
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