Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers
Authors:
- G.G. YanGYG.G. Yan
- X.F. LiuXLX.F. Liu
- Z.W. ShenZSZ.W. Shen
- Z.X. WenZWZ.X. Wen
- J. ChenJCJ. Chen
- W.S. ZhaoWZW.S. Zhao
- L. WangLWL. Wang
- F. ZhangFZF. Zhang
- X.H. ZhangXZX.H. Zhang
- X.G. LiXLX.G. Li
- G.S. SunGSG.S. Sun
- Y.P. ZengYZY.P. Zeng
- 1 January 2019
- journal article
- conference paper
- Published by Elsevier in Journal of Crystal Growth
- Vol. 505, 1-4
Abstract
No abstract availableKeywords
Funding Information
- Science Challenge Project (TZ2018003)
- National Key Research and Development Program of China (2015CB759600)
- National Natural Science Foundation of China (61474113, 61574140)
- Beijing Nova Program (2016071, Z181100006218121)
- Beijing Municipal Science and Technology Commission, Adminitrative Commission of Zhongguancun Science Park (Z161100002116018)
- Youth Innovation Promotion Association of CAS (2012098)
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