Luminescence of zinc doped solution grown GaAs: the effect of arsenic pressure
Author:
- Morton B. PanishMPMorton B. Panish
- 1 February 1968
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 29 (2) , 409-410
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Dependence of the Diffusion Coefficient on the Fermi Level: Zinc in Gallium ArsenidePhysical Review B, 1967
- The solid solubility limits of zinc in GaAs at 1000Journal of Physics and Chemistry of Solids, 1967
- Luminescence of zinc doped solution grown gallium arsenideJournal of Physics and Chemistry of Solids, 1967
- Photoluminescence and solution growth of gallium arsenideSolid-State Electronics, 1966
- TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERSApplied Physics Letters, 1964