Transistor and circuit design for 100-200-GHz ICs
Authors:
- M. UrteagaMUM. Urteaga
- R. PiersonRPR. Pierson
- P. RowellPRP. Rowell
- 12 September 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 40 (10) , 2061-2069
Abstract
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws introduced. Device and circuit results are summarized, including a simultaneous 450 GHz f/sub /spl tau// and 490 GHz f/sub max/ DHBT, 172-GHz amplifiers with 8.3-dBm output power and 4.5-dB associated power gain, and 150-GHz static frequency dividers (a digital circuit figure-of-merit for a device technology). To compete with advanced 100-nm SiGe processes, InP HBTs must be similarly scaled and high process yields are imperative. Described are several process modules in development: these include an emitter-base dielectric sidewall spacer for increased yield, a collector pedestal implant for reduced extrinsic C/sub cb/, and emitter junction regrowth for reduced base and emitter resistances.Keywords
This publication has 21 references indexed in Scilit:
- 3.3 ps SiGe bipolar technology2005
- Deep submicron InP DHBT technology with electroplated emitter and base contacts2004
- Ultra high frequency static dividers < 150 GHz in a narrow mesa InGaAs/InP DHBT technology2004
- Self-Aligned InP DHBT with$f_tau$and$f_max$Over 300 GHz in a New Manufacturable TechnologyIEEE Electron Device Letters, 2004
- Thermal Limitations of InP HBTs in 80- and 160-Gb ICsIEEE Transactions on Electron Devices, 2004
- A low power (45mW/latch) static 150GHz CML divider2004
- Challenges and opportunities for InP HBT mixed signal circuit technology2003
- Submicron scaling of HBTsIEEE Transactions on Electron Devices, 2001
- SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICsInternational Journal of High Speed Electronics and Systems, 2001
- SMALL-SCALE InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED AND LOW-POWER INTEGRATED-CIRCUIT APPLICATIONSInternational Journal of High Speed Electronics and Systems, 2001