GaSb/InGaAs quantum dot–well hybrid structure active regions in solar cells
Authors:
- Ramesh B. LaghumavarapuRLRamesh B. Laghumavarapu
- Baolai L. LiangBLBaolai L. Liang
- Zachary S. BittnerZBZachary S. Bittner
- Tugba S. NavruzTNTugba S. Navruz
- Seth M. HubbardSHSeth M. Hubbard
- Andrew NormanAndrew Norman
- Diana L. HuffakerDHDiana L. Huffaker
- 1 July 2013
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 114, 165-171
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Two-photon excitation in an intermediate band solar cell structureApplied Physics Letters, 2012
- GaSb/GaAs type-II quantum dots grown by droplet epitaxyNanotechnology, 2009
- Nanostructured photovoltaics for space powerJournal of Nanophotonics, 2009
- Charge-carrier states and light absorption in ordered quantum dot superlatticesPhysical Review B, 2007
- Emitter degradation in quantum dot intermediate band solar cellsApplied Physics Letters, 2007
- Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructuresSemiconductor Science and Technology, 2006
- Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxyJournal of Applied Physics, 1999
- Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate LevelsPhysical Review Letters, 1997
- Optical investigations of the dynamic behavior of GaSb/GaAs quantum dotsApplied Physics Letters, 1996
- Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beamJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1993