Effect of sputtering bias voltage on the structure and properties of Zr–Ge–N diffusion barrier films

This publication has 17 references indexed in Scilit:

• Improved electrical and reliability performance of 65nm interconnects with new barrier integration schemes
  Microelectronic Engineering, 2006
• Effect of crystallinity and preferred orientation of Ta2N films on diffusion barrier properties for copper metallization
  Surface and Coatings Technology, 2006
• The growth and diffusion barrier properties of atomic layer deposited NbNx thin films
  Thin Solid Films, 2005
• The effect of deposition temperature on the properties of TiN diffusion barriers prepared by atomic layer chemical vapor deposition
  Thin Solid Films, 2005
• The characterization of Zr–Si–N diffusion barrier films with different sputtering bias voltage
  Thin Solid Films, 2004
• Reliability challenges for copper interconnects
  Microelectronics Reliability, 2004
• Effects of Si content and free Si on oxidation behavior of Ti–Si–N coating layers
  Thin Solid Films, 2004
• Thermodynamic and kinetic study of solid state reactions in the Cu–Si system
  Journal of Applied Physics, 1999
• Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials
  Thin Solid Films, 1999
• Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization
  Thin Solid Films, 1999