Two 320 GHz Signal Sources Based on SiGe HBT Technology
Authors:
- 29 January 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 25 (3) , 178-180
Abstract
Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a Gm-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of -6.3 dBm and a phase noise of -96.6 dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and -94.7 dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.Keywords
Funding Information
- National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2012R1A2A1A01005584) and IDEC
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