Sputtered Lead Zirconate Titanate Thin Films Deposited on Silicon-on-Sapphire Substrates
- 1 July 2018
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-3
Abstract
Sputtered Pb(Zr 52 Ti 48 )O 3 (PZT) thin films grown on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on 150 mm Si/SiO 2 wafers. PZT films deposited on SOS show improvement in P MAX (46.2 vs. 42.1 μV/cm 2 ) and P REM (22.0 vs. 16.5 μV/cm 2 ) over films deposited on Si. A decrease in maximum ε r from 1027 (Si) to 927 (SOS) is also noted. Crystal structure is examined using X-ray diffraction, while ferroelectric P-E hysteresis curves, dielectric constant tuning, and loss tangent are studied using fabricated capacitor structures.Keywords
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