Low‐noise and high‐gain wideband LNA with g m ‐boosting technique
Authors:
Open Access
- 1 August 2013
- journal article
- circuits and-systems
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 49 (18) , 1126-1128
Abstract
A broadband low‐noise amplifier (LNA) is proposed. The active g m ‐boosting technique is utilised to reduce the common‐gate (CG) LNA noise figure and improve gain. An implemented prototype using 0.13 μm CMOS technology is evaluated using on‐wafer probing. S 11 and S 22 are below − 10 dB across 0.1–5 GHz. Measurements show a power gain of 18.3 dB with a − 3 dB bandwidth from 100 MHz to 2.1 GHz and an IIP3 of − 7 dBm at 2 GHz. The measured noise figure is better than 2.5 dB below 2.1 GHz, better than 4.5 dB below 5 GHz and at 500 MHz it obtains its minimum value 1.8 dB. The LNA consumes 14 mW from 1.5 V supply and occupies an area of 0.04 mm 2 .Keywords
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