Optical properties of porous silicon films
Authors:
- C. PickeringCPC. Pickering
- M.I.J. BealeMBM.I.J. Beale
- D.J. RobbinsDRD.J. Robbins
- P.J. PearsonPPP.J. Pearson
- R. GreefRGR. Greef
- 1 March 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 125 (1-2) , 157-163
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Microstructure and formation mechanism of porous siliconApplied Physics Letters, 1985
- Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate siliconJournal of Physics C: Solid State Physics, 1984
- Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layersJournal of Applied Physics, 1984
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- A new dielectric isolation method using porous siliconSolid-State Electronics, 1981
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980
- Oxidation of Porous Silicon and Properties of Its Oxide FilmJapanese Journal of Applied Physics, 1980
- Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometryPhysical Review B, 1979
- The Optical Constants of Silicon and Dry Oxygen Oxides of Silicon at 5461AJournal of the Electrochemical Society, 1978
- Practical limitations to accuracy in a nulling automatic wavelength-scanning ellipsometerSurface Science, 1976