Large-Signal Model of Graphene Field- Effect Transistors—Part II: Circuit Performance Benchmarking

Authors:

Francisco Pasadas
Francisco Pasadas

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18 May 2016

journal article
research article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 63 (7) , 2942-2947
DOI:10.1109/ted.2016.2563464

Abstract

This paper presents a circuit performance benchmarking using the large-signal model of graphene FET reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. In particular, we have simulated a high-frequency performance amplifier, together with other circuits that take the advantage of the ambipolarity of graphene, such as a frequency doubler, an RF subharmonic mixer, and a multiplier phase detector. A variety of simulations comprising dc, transient dynamics, Bode diagram, S parameters, and power spectrum have been compared with experimental data to assess the validity of the model.

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Version 1, 2016-05-26, ArXiv

Funding Information

European Union’s Horizon 2020 Research and Innovation Programme (696656)
Ministerio de Economía y Competitividad (TEC2012-31330, TEC2015-67462-C2-1-R)

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