Progress and outlook for MRAM technology
Authors:
- J.M. SlaughterJSJ.M. Slaughter
- E. ChenECE. Chen
- M. DurlamMDM. Durlam
- J. ShiJSJ. Shi
- M. DeHerrenMDM. DeHerren
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 35 (5) , 2814-2819
Abstract
We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM),a semiconductor memory with magnetic bits for nonvolatile storage. MRAM architectures based on Giant Magnetoresistance (GMR) and Magnetic Tunnel Junction (MTJ) cells are described. This paper will discuss our progress on improving the material structures, memory bits, thermal stability of the bits, and competitive architectures for GMR and MTJ based MRAM memories as well as the potential of these memories in the commercial memory market.Keywords
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