On the origin of free carriers in high‐conducting n‐GaN
Authors:
- 1 January 1983
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 18 (3) , 383-390
Abstract
Growth experiments with GaN in the system Ga/HCl/NH3/He at different growth temperatures show that the assumption of N‐vacancies to be responsible for the high n‐conductivity is questionable. The dependence of carrier concentration on growth temperature as well as the decrease in carrier concentration when additionally purified NH3 is used indicate that donor impurities are incorporated. The most probable impurity is oxygen, substitutionally incorporated onto N‐sites. The observed growth rate dependence of carrier concentration can well be explained by a kinetically controlled incorporation process.Keywords
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