Piezoelectric ZnO-nanorod-structured pressure sensors using GaN-based field-effect-transistor
Authors:
- 16 February 2015
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 106 (7) , 073502
Abstract
To utilize the piezoelectric property of ZnO nanorods, the ZnO nanorod array was grown on the AlGaN/GaN field-effect-transistor as the pressure sensors. The drain-source current of the ZnO nanorod-structured-AlGaN/GaN FET pressure sensors can be effectively modulated by the induced gate voltage caused from the piezoelectric phenomenon of ZnO nanorods under different pressures. The pressure sensors revealed the linearly response current under the pressure from 19.6 mN/mm2 to 490 mN/mm2. The ratio of the response current achieved 2.67% under the pressure of 490 mN/mm2. The induced piezoelectric potential under different pressure was also calculated and obtained in this work.Keywords
Funding Information
- Ministry of Science and Technology, Taiwan (MOST-102-2221-E-006-269, MOST-103-2221-E-006-002)
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