Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

Authors:
Publisher website
Google Scholar
Abstract
By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr0.48Ca0.52MnO3 (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.
Funding Information
  • European Union Council (246102)
  • Federal Ministry of Education and Research (BMBF) (05KS7UM1, 05K10UMA, 05KS7WW3, 05K10WW1)

This publication has 33 references indexed in Scilit: