Gallium adsorption on (0001) GaN surfaces

Authors:
  • CAC. Adelmann
    C. Adelmann
  • JBJ. Brault
    J. Brault
  • GMG. Mula
    G. Mula
  • BDB. Daudin
    B. Daudin
  • LLL. Lymperakis
    L. Lymperakis
  • JNJ. Neugebauer
    J. Neugebauer
Preprint
Publisher website
Google Scholar
Abstract
We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. The temperature dependence is discussed within an {\em ab initio} based growth model for adsorption taking into account the nucleation of Ga clusters.