A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation
Authors:
- S. ParkeSPS. Parke
- J. BokorJBJ. Bokor
- P.K. KoPKP.K. Ko
- Chenming HuCHChenming Hu
Top Cited Papers
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 809-812
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- High-gain lateral bipolar action in a MOSFET structureIEEE Transactions on Electron Devices, 1991
- Deep-submicrometer MOS device fabrication using a photoresist-ashing techniqueIEEE Electron Device Letters, 1988
- An SOI voltage-controlled bipolar-MOS deviceIEEE Transactions on Electron Devices, 1987