Physical Origin of Negative Differential Resistance in V3O5 and Its Application as a Solid‐State Oscillator
Open Access
- 30 December 2022
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 35 (8) , e2208477
Abstract
Oxides that exhibit an insulator–metal transition can be used to fabricate energy‐efficient relaxation oscillators for use in hardware‐based neural networks but there are very few oxides with transition temperatures above room temperature. Here the structural, electrical, and thermal properties of V3O5 thin films and their application as the functional oxide in metal/oxide/metal relaxation oscillators are reported. The V3O5 devices show electroforming‐free volatile threshold switching and negative differential resistance (NDR) with stable (3O5‐based relaxation oscillators is reported, showing that capacitively coupled devices exhibit rich non‐linear dynamics, including frequency and phase synchronization. These results establish V3O5 as a new functional material for volatile threshold switching and advance the development of robust solid‐state neurons for neuromorphic computing.Keywords
Funding Information
- National Science Foundation (2033328)
- Deutsche Forschungsgemeinschaft (HE 2698/11‐1)
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