Robust approach towards wearable power efficient transistors with low subthreshold swing
Authors:
- Ehsan ElahiEhsan Elahi
- Muhammad SulemanMSMuhammad Suleman
- Sobia NisarSNSobia Nisar
- Pradeep Raj SharmaPSPradeep Raj Sharma
- Muhammad Waqas IqbalMuhammad Waqas Iqbal
- Supriya A. PatilSPSupriya A. Patil
- Honggyun KimHKHonggyun Kim
- Sohail AbbasSohail Abbas
- Vijay D. ChavanVCVijay D. Chavan
- Ghulam DastgeerGhulam Dastgeer
- Jamal AzizJAJamal Aziz
- 5 December 2022
- journal article
- research article
- Published by Elsevier in Materials Today Physics
- Vol. 30
Abstract
No abstract availableKeywords
Funding Information
- National Research Foundation of Korea (2022R1G1A1009887)
- Sejong University
This publication has 156 references indexed in Scilit:
- Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary invertersNature Materials, 2012
- A scalable neuristor built with Mott memristorsNature Materials, 2012
- A roadmap for grapheneNature, 2012
- Tunnel field-effect transistors as energy-efficient electronic switchesNature, 2011
- Graphene photonics and optoelectronicsNature Photonics, 2010
- Graphene transistorsNature Nanotechnology, 2010
- Ultrafast graphene photodetectorNature Nanotechnology, 2009
- Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnOApplied Physics Letters, 2007
- Mechanism and observation of Mott transition in VO2-based two- and three-terminal devicesNew Journal of Physics, 2004
- A simple subthreshold swing model for short channel MOSFETsSolid-State Electronics, 2001