Current Confinement Effect on the Performance of Blue Light Micro-LEDs with 10 μm Dimension
Authors:
Open Access
- 11 September 2023
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Omega
- Vol. 8 (38) , 35351-35358
Abstract
The current confinement effect on the micro-LED (μLED) with a 10 μm dimension was simulated using SpeCLED software. In this study, three p-contact sizes were considered: 2 μm × 2 μm, 5 μm × 5 μm, and 8 μm × 8 μm dimensions for μLEDs with a 10 μm dimension. According to the simulation data, the highest external quantum efficiency (EQE) of 13.24% was obtained with a 5 μm × 5 μm contact size. The simulation data also showed that the μLEDs with narrow contact sizes experienced higher operating temperatures due to the current crowding effect. The experimental data revealed a red-shift effect in narrow contact sizes, indicating higher heat generation in those devices. As the contact sizes increased from 2 to 8 μm, the turn-on voltage decreased due to lower equivalent resistance. Additionally, the leakage current increased from 44 pA to 1.6 nA at a reverse voltage of -5 V. The study found that the best performance was achieved with a contact ratio of 0.5, which resulted in the highest EQE at 9.95%. This superior performance can be attributed to the better current confinement of the μLED compared to the μLED with a contact ratio of 0.8, resulting in lower leakage current and improved current spreading when compared to the μLED with a contact ratio of 0.2.Keywords
Funding Information
- National Science and Technology Council (111-2218-E-A49-019-MBK, 112-2218-E-A49-022 -MBK)
- Central Taiwan Science Park (111AO29B)
This publication has 35 references indexed in Scilit:
- Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting DiodesNanomaterials, 2019
- High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer depositionOptics Express, 2018
- Al2O3 Passivation Layer for InGaN/GaN LED Deposited by Ultrasonic Spray PyrolysisIEEE Photonics Technology Letters, 2014
- Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting DiodesJournal of Display Technology, 2013
- The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodesApplied Physics Letters, 2009
- Dielectric passivation effects on ZnO light emitting diodesApplied Physics Letters, 2008
- Wet etching of GaN, AlN, and SiC: a reviewMaterials Science and Engineering: R: Reports, 2005
- High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wellsApplied Physics Letters, 2000
- Effects of macroscopic polarization in III-V nitride multiple quantum wellsPhysical Review B, 1999
- Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light-emitting diodesApplied Physics Letters, 1996