Fast march tests for defects in resistive memory
Authors:
- 1 July 2015
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 88-93
Abstract
Resistive Memory is a promising candidate to several applications. However, is prone to high defects due to the nanoscale fabrication uncertainties. Test time of traditional testing techniques is dominated by writes which are slower than reads. Fast March tests for defects in resistive memory are proposed in this paper. Test application time is reduced by approximately 96% when compared to existing methods. An appropriate DfT scheme to implement the new test approach is also proposed.Keywords
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