A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications
- 7 October 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 49 (12) , 2938-2950
Abstract
This paper presents a high-power 0.53 THz source module with programmable diversity to adjust the brightness and the direction of light to obtain the desired diffuse lighting conditions in THz imaging applications. The source module consists of a single SiGe BiCMOS chip which operates an array of 16 source-pixel incoherently. Each source pixel consists of a primary on-chip ring-antenna and two triple-push oscillators locked 180° out-of-phase. The module provides a total radiated power of up to 1 mW (0 dBm) with 62.5 μW (-12 dBm) per source pixel on average and an EIRP per pixel of 25 dBm. The circuit layout is scalable in size and output power. The chip consumes up to 2.5 W from a 2.4 V supply and 3.2 mW from a digital 1.2 V supply respectively. The module includes a secondary silicon lens, is programmable through a CPLD, and supplied from a USB port. The THz radiation can be recorded with a CMOS 1 k-pixel THz video camera and represent an all silicon solution for real-time active THz imaging.Keywords
This publication has 50 references indexed in Scilit:
- On design of differentially driven on-chip antennas with harmonic filtering for silicon integrated mm-wave and THz N-push oscillators2014
- 14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS2014
- A 0.39–0.44 THz 2x4 Amplifier-Quadrupler Array With Peak EIRP of 3–4 dBmIEEE Transactions on Microwave Theory and Techniques, 2013
- CMOS sources and detectors for sub-millimeter wave applications2013
- A 288-GHz Lens-Integrated Balanced Triple-Push Source in a 65-nm CMOS TechnologyIEEE Journal of Solid-State Circuits, 2013
- A 288-GHz lens-integrated balanced triple-push source in a 65-nm CMOS technology2012
- InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THzIEEE Journal of Solid-State Circuits, 2011
- A Broadband mm-Wave and Terahertz Traveling-Wave Frequency Multiplier on CMOSIEEE Journal of Solid-State Circuits, 2011
- High Power Terahertz and Millimeter-Wave Oscillator Design: A Systematic ApproachIEEE Journal of Solid-State Circuits, 2011
- Active MMW Imaging Technique for Contraband Detection2003