MoS2Memristors Exhibiting Variable Switching Characteristics toward Biorealistic Synaptic Emulation
Authors:
- Da LiDLDa Li
- Bin WuBWBin Wu
- Xiaojian ZhuXZXiaojian Zhu
- Juntong WangJWJuntong Wang
- Byunghoon RyuBRByunghoon Ryu
- Wei D. LuWLWei D. Lu
- Wei LuWLWei Lu
- Xiaogan LiangXLXiaogan Liang
- 7 September 2018
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 12 (9) , 9240-9252
Abstract
Memristors based on 2D layered materials could provide biorealistic ionic interactions and potentially enable construction of energy-efficient artificial neural networks capable of faithfully emulating neuronal interconnections in human brains. To build reliable 2D-material-based memristors suitable for constructing working neural networks, the memristive switching mechanisms in such memristors need to be systematically analyzed. Here, we present a study on the switching characteristics of the few-layer MoS2 memristors made by mechanical printing. First, two types of dc-programmed switching characteristics, termed rectification-mediated and conductance-mediated behaviors, are observed among different MoS2 memristors, which are attributed to the modulation of MoS2/metal Schottky barriers and redistribution of vacancies, respectively. We also found that an as-fabricated MoS2 memristor initially exhibits an analog pulse-programmed switching behavior, but it can be converted to a quasi-binary memristor with an abrupt switching behavior through an electrical stress process. Such a transition of switching characteristics is attributed to field-induced agglomeration of vacancies at MoS2/metal interfaces. The additional Kelvin probe force microscopy, Auger electron spectroscopy analysis, and electronic characterization results support this hypothesis. Finally, we fabricated a testing device consisting of two adjacent MoS2 memristors and demonstrated that these two memristors can be ionically coupled to each other. This device interconnection scheme could be exploited to build neural networks for emulating ionic interactions among neurons. This work advances the device physics for understanding the memristive properties of 2D-material-based memristors and serves as a critical foundation for building biorealistic neuromorphic computing systems based on such memristors.Keywords
Funding Information
- Division of Electrical, Communications and Cyber Systems (ECCS-1452916)
This publication has 50 references indexed in Scilit:
- Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid GatingACS Nano, 2013
- Highly Flexible MoS2 Thin-Film Transistors with Ion Gel DielectricsNano Letters, 2012
- Ambipolar MoS2 Thin Flake TransistorsNano Letters, 2012
- Low-temperature photocarrier dynamics in monolayer MoS2Applied Physics Letters, 2011
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- The missing memristor foundNature, 2008
- XPS investigation of preferential sputtering of S from MoS2 and determination of MoSx stoichiometry from Mo and S peak positionsApplied Surface Science, 1999
- Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDAPhysical Review B, 1996
- Quantitative determination of surface composition of sulfur bearing anion mixtures by Auger electron spectroscopyAnalytical Chemistry, 1980
- Band Structures of Transition-Metal-Dichalcogenide Layer CompoundsPhysical Review B, 1973