A 450 MS/s 10-bit time-interleaved zero-crossing based ADC

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Abstract
A 450-MS/s 10-bit time-interleaved zero-crossing based pipelined ADC is described. The prototype ADC, fabricated in a 90-nm CMOS process, occupies 1.3 mm2. A reference pre-charging technique is applied to reduce the voltage ripples on the reference voltages. Gain, offset, and timing calibration is applied to achieve an 8.7 ENOB with a 211 MHz input signal and dissipates 34 mW from a 1.2V supply for a FOM of 182 fJ/step.