Charge trapping properties and retention time in amorphous SiGe/SiO₂ nanolayers

This publication has 14 references indexed in Scilit:

• Carrier storage in Ge nanoparticles produced by pulsed laser deposition
  Physica Status Solidi (RRL) – Rapid Research Letters, 2012
• Optical and electrical properties of undoped and doped Ge nanocrystals
  Discover Nano, 2012
• Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO2
  Discover Nano, 2011
• Structural and charge trapping properties of two bilayer (Ge+SiO2)/SiO2 films deposited on rippled substrate
  Applied Physics Letters, 2010
• Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure
  Journal of Applied Physics, 2009
• Electrical and optical characteristics of silicon nanocrystal solar cells
  Applied Physics Letters, 2009
• Memory effect in MIS structures with amorphous silicon nanoparticles embedded in ultra thin SiOx matrix
  Journal of Physics and Chemistry of Solids, 2007
• High trap density and long retention time from self-assembled amorphous Si nanocluster floating gate nonvolatile memory
  Applied Physics Letters, 2006
• Tunnel oxide thickness dependence of activation energy for retention time in SiGe quantum dot flash memory
  Applied Physics Letters, 2006
• Electron charging and discharging in amorphous silicon quantum dots embedded in silicon nitride
  Applied Physics Letters, 2002