Analysis of mixed optical transitions in dilute magnetic AlAs/GaAs/GaMnAs quantum wells grown on high substrate index by molecular beam epitaxy
Authors:
- Shemshat KerimovaSKShemshat Kerimova
- Omer DonmezODOmer Donmez
- Mustafa GunesMGMustafa Gunes
- Furkan KuruogluFKFurkan Kuruoglu
- Mustafa AydınMAMustafa Aydın
- Cebrail GumusCGCebrail Gumus
- Ayse ErolAEAyse Erol
- 7 February 2023
- journal article
- research article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 290
Abstract
No abstract availableKeywords
Funding Information
- Istanbul Üniversitesi (FBG-2022-38573)
This publication has 54 references indexed in Scilit:
- A study of photomodulated reflectance on staircase-like, n-doped GaAs/Al x Ga1−xAs quantum well structuresDiscover Nano, 2012
- Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity bandNature Materials, 2012
- Ferromagnetic semiconductor GaMnAsMaterials Today, 2009
- Magnetic anisotropy of Ga1−xMnxAs thin films on GaAs (311)A probed by ferromagnetic resonanceApplied Physics Letters, 2006
- Large terrace formation and modulated electronic states in (110) GaAs quantum wellsPhysical Review B, 2001
- Optical transitions of Al0.35Ga0.65As/GaAs asymmetric double quantum wells grown on GaAs(n11)A (n≤4) substratesMicroelectronics Journal, 1999
- Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorPhysical Review B, 1997
- Topography of high- and low-index GaAs surfacesPhysical Review B, 1992
- Direct synthesis of corrugated superlattices on non-(100)-oriented surfacesPhysical Review Letters, 1991
- New III-V diluted magnetic semiconductors (invited)Journal of Applied Physics, 1991