Mg Deficiency in Grain Boundaries of n‐Type Mg3Sb2 Identified by Atom Probe Tomography

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Abstract
Highly resistive grain boundaries significantly reduce the electrical conductivity that compromises the thermoelectric figure‐of‐merit zT in n‐type polycrystalline Mg3Sb2. In this work, discovered is a Mg deficiency near grain boundaries using atom‐probe tomography. Approximately 5 at% of Mg deficiency is observed uniformly in a 10 nm region along the grain boundary without any evidence of a stable secondary or impurity phase. The off‐stoichiometry can prevent n‐type dopants from providing electrons, lowering the local carrier concentration near the grain boundary and thus the local conductivity. This observation explains how nanometer scale compositional variations can dramatically determine thermoelectric zT, and provides concrete strategies to reduce grain‐boundary resistance and increase zT in Mg3Sb2‐based materials.
Funding Information
  • National Science Foundation (1334713, 1334351, 1333335, DMR‐0420532)
  • Office of Naval Research (N00014‐0400798, N00014‐0610539, N00014‐0910781, N00014‐1712870)
  • Materials Research Science and Engineering Center, Harvard University (NSF DMR‐1720139)

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