A CMOS integrated rectenna for implantable applications

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Abstract
A fully-integrated rectenna with a chip area of 0.43 mm2 is designed for ISM 915 MHz band for battery-less ultra-low-power body implantable applications. The circuit is implemented in GlobalFoundries 45 nm CMOS SOI technology and is based on a miniaturized slot antenna integrated with a novel full-wave cross-coupled bridge rectifier design that facilitates low turn-on voltage and very low leakage current. When excited by a 0.95 GHz signal through a horn antenna with an effective isotropic radiated power (EIRP) of 36 dBm, the rectenna provides more than 50 μW of DC power and a rectified DC voltage of higher than 1 V at distances below 16 cm. Power harvesting increases to 1.44 mW at distances below 2 cm. The device provides 1 V / 50 μW DC power when placed under a 1 cm thick chicken breast tissue at distances of up to 4 cm, while powered from 36 dBm EIRP transmitting antenna.