60-GHz monolithic oscillator using InGaP/InGaAs/GaAs HEMT technology
Authors:
- Y. KawasakiYKY. Kawasaki
- K. ShirakawaKSK. Shirakawa
- Y. OhashiYOY. Ohashi
- T. SaitoTST. Saito
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 541-544
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- An approach to determining an equivalent circuit for HEMTsIEEE Transactions on Microwave Theory and Techniques, 1995
- Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiersIEEE Electron Device Letters, 1993