Plasma-reactive SiC quantum dots on polycrystalline AlN films
Authors:
- 1 February 2006
- journal article
- conference paper
- Published by AIP Publishing in Physics of Plasmas
- Vol. 13 (2) , 023506
Abstract
The self-assembly of SiC quantum dots (SiC QDs) formed on AlN films is investigated. Under optimized growth conditions, SiC QDs with a remarkably narrow size distribution on polycrystalline AlN films can be achieved with the presence of a wetting layer of SiC film by low-frequency inductively coupled plasma- (LF-ICP-) assisted magnetron sputtering. A transmission electron microscope (TEM), field-emission scanning electron microscope (FE-SEM) images, and an energy-dispersive x-ray (EDX) spectrometer clearly demonstrate that SiC QDs are formed on the polycrystalline AlN films.Keywords
This publication has 18 references indexed in Scilit:
- Photoluminescence features on the Raman spectra of quasistoichiometric SiC nanoparticles: Experimental and numerical simulationsPhysical Review B, 2002
- Self-assembled large-scale and cylindrical CuInSe2quantum dots on indium tin oxide filmsNanotechnology, 2002
- Size effect in self-trapped exciton photoluminescence from-based nanoscale materialsPhysical Review B, 2001
- Single-mode Spontaneous Emission from a Single Quantum Dot in a Three-Dimensional MicrocavityPhysical Review Letters, 2001
- Exploiting the Difference in Lattice Structures for Formation of Self-Assembled PbS Dots on InP(110)Physical Review Letters, 2000
- Effects of excess carbon and vibrational properties in ultrafine SiC powdersThe European Physical Journal Applied Physics, 1999
- Equilibrium Shapes and Properties of Epitaxially Strained IslandsPhysical Review Letters, 1997
- Purification Procedure for Single-Walled NanotubesThe Journal of Physical Chemistry B, 1997
- Blue emission in porous silicon: Oxygen-related photoluminescencePhysical Review B, 1994
- Quantum confinement in Si nanocrystalsPhysical Review B, 1993