Properties of ZrO[sub 2] Passive Film Formed onto Zr Electrode in 1 M NaOH at Low Voltage

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Abstract
In this paper, results of the potentiodynamic–potentiostatic formation of a homogeneous, passive film of on a Zr electrode in a 1 M NaOH solution at potentials lower than 4.0 V vs saturated calomel electrode are presented. The properties of such a film were investigated by electrochemical impedance spectroscopy (EIS) measurements. After fitting the EIS results by an appropriate equivalent circuit, the capacitance and resistance , as well as the space charge capacitance and space charge resistance of this film, were determined. The film was found to become an insulator (IN) at the potentials equal to and/or more positive than 2.0 V. In the potential range , a transition from a semiconducting to insulating behavior (SC-IN) has been recorded. The donor densities , as well as their flatband potentials and their space charge layer thickness, were determined from the corresponding Mott–Schottky plots recorded in two potential ranges and , where the film behaved as an n-type semiconductor. From the potential range of the insulating behavior of the film (IN), its thickness was determined from .
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