Performance and ruggedness of 1200V SiC — Trench — MOSFET
Authors:
- Dethard PetersDPDethard Peters
- Ralf SiemieniecRSRalf Siemieniec
- Thomas AichingerTAThomas Aichinger
- Thomas BaslerTBThomas Basler
- Romain EsteveRERomain Esteve
- Wolfgang BergnerWBWolfgang Bergner
- Daniel KueckDKDaniel Kueck
- 1 May 2017
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 239-242
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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