Accounting for time-dependent effects on CMOS total-dose response in space environments
Authors:
- Daniel M. FleetwoodDFDaniel M. Fleetwood
- Peter S. WinokurPWPeter S. Winokur
- Charles E. BarnesCBCharles E. Barnes
- David C. ShawDSDavid C. Shaw
- 1 January 1994
- journal article
- Published by Elsevier in Radiation Physics and Chemistry
- Vol. 43 (1-2) , 129-138
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Hardness assurance for low-dose space applications (MOS devices)IEEE Transactions on Nuclear Science, 1991
- Response of advanced bipolar processes to ionizing radiationIEEE Transactions on Nuclear Science, 1991
- Predicting switched-bias response from steady-state irradiations MOS transistorsIEEE Transactions on Nuclear Science, 1990
- An improved standard total dose test for CMOS space electronicsIEEE Transactions on Nuclear Science, 1989
- Application of a model for treatment of time dependent effects on irradiation of microelectronic devicesIEEE Transactions on Nuclear Science, 1989
- Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environmentsIEEE Transactions on Nuclear Science, 1988
- High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibilityIEEE Transactions on Nuclear Science, 1988
- A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS TransistorsIEEE Transactions on Nuclear Science, 1987
- Total Dose Effects at Low Dose RatesIEEE Transactions on Nuclear Science, 1986
- Super Recovery of Total Dose Damage in MOS DevicesIEEE Transactions on Nuclear Science, 1984