Performance Analysis of a Cu(In1−xGax)Se2 Solar Cell with Nontoxic WS2 and WSSe Buffer Layers
- 25 August 2022
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 51 (11) , 6168-6179
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- An investigation into the effects of band gap and doping concentration on Cu(In,Ga)Se2 solar cell efficiencySpringerPlus, 2016
- Numerical Investigations and Analysis of Cu2ZnSnS4Based Solar Cells by SCAPS-1DInternational Journal of Photoenergy, 2016
- Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challengesChemical Society Reviews, 2015
- Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell interfaces and implications for improving performanceThe Journal of Chemical Physics, 2014
- A recombination analysis of Cu(In,Ga)Se2 solar cells with low and high Ga compositionsSolar Energy Materials and Solar Cells, 2014
- Growth of Alloy MoS2xSe2(1–x) Nanosheets with Fully Tunable Chemical Compositions and Optical PropertiesJournal of the American Chemical Society, 2014
- Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cellsNature Materials, 2013
- Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2Nano Letters, 2013
- Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2thin‐film solar cellsProgress in Photovoltaics: Research and Applications, 2003
- Modelling polycrystalline semiconductor solar cellsThin Solid Films, 2000