Diffusion and Electrical Behavior of Zinc in Silicon

Zinc has been diffused into Si single crystals and estimations of the diffusion constant and solubility have been obtained by conductivity measurements. In the range 1000-1300°C the diffusivity varies between ${10}^{-6\mathrm{}}$ and ${10}^{-7\mathrm{}}$ ${\mathrm{cm}}^2$/sec. However, no definite trend with temperature could be established, presumably because of surface barriers on the Si. A maximum solubility of about 1.4×${10}^{17}$ ${\mathrm{cm}}^{-3\mathrm{}}$ occurs at 1350°C and retrograde behavior is observed.