Broadband near-infrared (NIR) light sources that combine high power, high efficiency, and wide spectral coverage are essential for emerging applications in imaging, sensing, and illumination. Phosphor-converted light-emitting diodes (pc-LEDs) offer a scalable platform for such sources, but their performance is often limited by weak visible-light absorption of d -electron emitters originating from parity-forbidden transitions. Here we report a symmetry engineering strategy that overcomes this limitation by partially relaxing the parity selection rules in Cr 3+ -activated systems. Controlled lattice perturbations in a rigid silicate framework break the local symmetry of Cr 3+ -coordinating octahedra, significantly enhancing blue-light absorption without increasing dopant concentration. In parallel, crystallographically distinct sites enable efficient inter-site energy funneling, directing excitation toward energetically favourable emission centers and improving radiative efficiency. The optimized phosphor exhibits broadband NIR emission at λ max ~ 880 nm with an internal and external quantum efficiency of 93% and 64%, among the highest reported values and along with excellent thermal and environmental stability. When integrated with a blue InGaN chip, the phosphor-converted device enables watt-level NIR output with excellent operational stability. These results highlight the role of local structural control in improving the performance of d-electron emitters and provide a viable route towards efficient broadband NIR light sources.