Pr2O3/Si(001) interface reactions and stability
Authors:
- Dieter SchmeißerDSDieter Schmeißer
- Jarek DąbrowskiJDJarek Dąbrowski
- Hans-Joachim MüssigHMHans-Joachim Müssig
- 15 June 2004
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 109 (1-3) , 30-33
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The Prs2O3 /Si(001) Interface: a Mixed Si-Pr OxideMRS Proceedings, 2003
- Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)Journal of Applied Physics, 2002
- Initial stages of praseodymium oxide film formation on Si()Surface Science, 2002
- Commissioning Results of the BTUC-PGM beamlineNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2001
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Scanning tunneling microscopy studies of structural disorder and steps on Si surfacesJournal of Vacuum Science & Technology A, 1989