Quantitative model for TMR and spin-transfer torque in MTJ devices
Authors:
- 1 December 2010
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 22.8.1-22.8.4
Abstract
We present a Non-Equilibrium Green's Function (NEGF)-based model for spin torque transfer (STT) devices which provides qualitative as well as quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque (τ ∥ ) and (4) out-of-plane torque (τ ⊥ ) over a range of bias voltages, using a single set of three adjustable parameters. We believe our model is able to cover this diverse range of experiments.Keywords
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