Special Issue on the 8th International Sino MOS ‐ AK Workshop and the 6th International Conference on Circuits and Systems

This publication has 7 references indexed in Scilit:

• A New Y‐Function MOSFET Mobility Extraction Method Accounting for Coulomb Scattering at Cryogenic Temperatures
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2026
• Influence of Gate Dimensions on High Power Microwave Injection Effects for AlGaAs / GaAs pHEMT
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2025
• Performance Evaluation and Accelerated Optimization of 4H ‐ SiC Power Devices Based on Neural Networks
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2025
• Development of Fe‐Based Amorphous/Nanocrystalline Alloys for Electromagnetic Interference Mitigation
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2025
• Quasi‐Vertical Diamond Schottky Barrier Diode With Sidewall‐Enhanced n‐Ga₂O₃/p‐Diamond Junction Termination Extension
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2025
• Modeling Single Event Transient in 28 Nm FDSOI MOSFETs Using a Neural Network Approach
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2025
• A Comprehensive Threshold Voltage Model for Si‐Based MOSFETs From Room to Cryogenic Temperatures
  International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2025