Spin-dependent tunneling of single electrons into an empty quantum dot
- 28 July 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 78 (4) , 041306
Abstract
Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron quantum dot at an AlGaAs/GaAs interface in a magnetic field parallel to the interface. We find that the ratio decreases with increasing magnetic field until tunneling into the excited spin state is completely suppressed. However, we find that by adjusting the voltages on the surface gates to change the orbital configuration of the dot, we can restore tunneling into the excited spin state and that the ratio reaches a maximum when the dot is symmetric.Keywords
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This publication has 25 references indexed in Scilit:
- Spins in few-electron quantum dotsReviews of Modern Physics, 2007
- Magnetoanisotropy of electron-correlation-enhanced tunneling through a quantum dotPhysical Review B, 2007
- Electron Bunching in Transport through Quantum Dots in a High Magnetic FieldPhysical Review Letters, 2007
- Spin selective spectroscopy of a quantum dot using tunnel-coupled quantum wires as spin filtersPhysical Review B, 2006
- Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum DotsScience, 2005
- Spin and Polarized Current from Coulomb Blockaded Quantum DotsPhysical Review Letters, 2003
- Stability of spin states in quantum dotsPhysical Review B, 2002
- Magnetic-field-induced singularities in spin-dependent tunneling through InAs quantum dotsPhysical Review B, 2000
- Addition spectrum of a lateral dot from Coulomb and spin-blockade spectroscopyPhysical Review B, 2000
- Quantum computation with quantum dotsPhysical Review A, 1998