Trends in the development of ULSI DRAM capacitors
Author:
- 1 May 1994
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 4 (3) , 247-256
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Thin TiO2 Films Prepared by Low Pressure Chemical Vapor DepositionJournal of the Electrochemical Society, 1993
- Dielectric Properties of RF-Magnetron-Sputtered (Ba, Pb)(Zr, Ti)O3 Thin FilmsJapanese Journal of Applied Physics, 1992
- Epitaxial Growth of SrTiO3 Films on Pt Electrodes and Their Electrical PropertiesJapanese Journal of Applied Physics, 1992
- Electrical characteristics of paraelectric lead lanthanum zirconium titanate thin films for dynamic random access memory applicationsApplied Physics Letters, 1992
- Reliability and Characterization of Composite Oxide/Nitride Dielectrics for Multi‐Megabit Dynamic Random Access Memory Stacked CapacitorsJournal of the Electrochemical Society, 1991
- Crown-shaped stacked-capacitor cell for 1.5-V operation 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMsProceedings of the IEEE, 1989
- Oxidized Ta/sub 2/O/sub 5//Si/sub 3/N/sub 4/ dielectric films on poly-crystalline Si for dRAMsIEEE Transactions on Electron Devices, 1989
- Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuitsIEEE Electron Device Letters, 1988
- Investigation of MOS capacitors with thin ZrO2layers and various gate materials for advanced DRAM applicationsIEEE Transactions on Electron Devices, 1986